PART |
Description |
Maker |
AM50DL9608GT75IS AM50DL9608GT75IT AM50DL9608GT70IS |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit
|
SPANSION[SPANSION]
|
S29CD016G0JFAA002 S29CD016G0JFAA012 S29CD016G0JFAA |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
|
SPANSION[SPANSION]
|
AM75DL9608HGT75IT AM75DL9608HG AM75DL9608HGB70IS A |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and
|
SPANSION[SPANSION]
|
AM42DL640AG85IS AM42DL640AG AM42DL640AG25IT AM42DL |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
|
SPANSION Advanced Micro Devices
|
AM49DL322BGT85T AM49DL322BGT85S AM49DL323BGB70T AM |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous 堆叠式多芯片封装MCP)闪存和SRAM32兆位M × 8 2米x 16位)3.0伏的CMOS只,同时 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc. Advanced Micro Devices, Inc.
|
AM29LV800B-100 AM29LV800B-120 AM29LV800B-150 AM29L |
8 Megabit (1048576 x 8-Bit/524288 x 16-Bit) CMOS 3.0 Volt-only Sectored Flash Memory 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
|
AMD[Advanced Micro Devices]
|
AT52BR3228A AT52BR3224A AT52BR3228AT-70CI AT52BR32 |
32-megabit Flash 4-megabit/ 8-megabit SRAM Stack Memory 32兆位闪存4兆位/ 8兆位的SRAM堆栈内存
|
Atmel Corp. Atmel, Corp.
|
M41000002M M41000002R M41000002W AM41DL3228GB30IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|